Multi-run Memory Tests for Pattern Sensitive Faults
Ireneusz MrozekThis book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
- Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
- Presents practical algorithms for design and implementation of efficient multi-run tests;
- Demonstrates methods verified by analytical and experimental investigations.
Kategori:
Tahun:
2019
Edisi:
1st ed.
Penerbit:
Springer International Publishing
Bahasa:
english
ISBN 10:
3319912046
ISBN 13:
9783319912042
Fail:
PDF, 2.61 MB
IPFS:
,
english, 2019
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